The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Dec. 19, 2017
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Hiroki Fujii, Ibaraki, JP;
Takahiro Mori, Ibaraki, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/762 (2006.01); H01L 29/423 (2006.01); H01L 21/3105 (2006.01); H01L 27/092 (2006.01); H01L 27/06 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/76224 (2013.01); H01L 29/063 (2013.01); H01L 29/0607 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/66659 (2013.01); H01L 29/66681 (2013.01); H01L 29/7835 (2013.01); H01L 21/31053 (2013.01); H01L 21/823814 (2013.01); H01L 27/0623 (2013.01); H01L 27/092 (2013.01); H01L 29/1083 (2013.01);
Abstract
A recessed portion is formed in a top surface of an isolation insulation film filling an isolation trench between a psource region and a pdrain region. A pdrift region is located below the isolation trench and connected to the pdrain region. A gate electrode fills the recessed portion. An n-type impurity region is located below the pdrift region and directly below the recessed portion.