The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Mar. 20, 2018
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, Tokyo, JP;
Kenichi Matsushita, Nonoichi Ishikawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONICS DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment includes a semiconductor layer having a first and a second plane; emitter and collector electrode; a trench gate electrode extending in a first direction substantially parallel to the first plane; a dummy trench gate electrode extending in the first direction; a p base region; an emitter region; an n base region; a collector region; a trench gate insulating film; a dummy trench gate electrode; a dummy trench gate insulating film; a first gate pad electrode connected to the trench gate electrode and the dummy trench gate electrode; a first electric resistor connected between the first gate pad electrode and the trench gate electrode, and a second electric resistor connected between the first gate pad electrode and the dummy trench gate electrode. A CR time constant of the trench gate electrode is less than a CR time constant of the dummy trench gate electrode.