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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10468496 B1

PDFFull Text
Date of Patent:
Nov. 05, 2019

Filed:

Oct. 23, 2017

Manufacturing method for semiconductor device having an oxidation-resistant insulating film in a termination region

Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventors:

Kenichi Hisada, Ibaraki, JP;

Koichi Arai, Ibaraki, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

Shapiro, Gabor and Rosenberger, PLLC

Primary Examiner:

Xia L Cross

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 23/31 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01); H01L 21/02 (2006.01); H01L 23/29 (2006.01); H01L 29/739 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66068 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/02271 (2013.01); H01L 21/045 (2013.01); H01L 21/049 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0634 (2013.01); H01L 29/0692 (2013.01); H01L 29/1608 (2013.01); H01L 29/7811 (2013.01); H01L 29/063 (2013.01); H01L 29/0696 (2013.01); H01L 29/511 (2013.01); H01L 29/518 (2013.01); H01L 29/7395 (2013.01);
Abstract

A semiconductor device includes: a first conductivity type semiconductor substrate made of silicon carbide; a second conductivity type body region in a device region of the semiconductor substrate; a first conductivity type source region formed in the body region; and a gate electrode formed on the body region through gate insulating films. The semiconductor device further includes, in a termination region of the semiconductor substrate, second conductivity type RESURF layers, and an edge termination region formed in the RESURF layers. Then, the RESURF layers and a front surface of the semiconductor substrate adjacent to the RESURF layers are covered by an oxidation-resistant insulating film.

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