The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Aug. 11, 2016
Applicants:
James Lin, New Haven, CT (US);
Francesco Anthony Annetta, Cheshire, CT (US);
Inventors:
James Lin, New Haven, CT (US);
Francesco Anthony Annetta, Cheshire, CT (US);
Assignee:
Alacrity Semiconductors, Inc., Branford, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 49/02 (2006.01); H01L 27/11502 (2017.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 21/28291 (2013.01); H01L 27/11502 (2013.01); H01L 28/56 (2013.01);
Abstract
Integrated circuits including a ferroelectric memory cell and methods for manufacturing the same. One embodiment of the memory cells include three main layers: a first oxide ferroelectric layer, a second oxide anti-ferroelectric layer, and a covering layer. The ferroelectric material of the first and second oxides include as main components oxygen and any of the group containing Hf, Zr, and (Hf, Zr).