The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Apr. 23, 2018
Applicant:

Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Olivier Saxod, Brignoud, FR;

Marie Guillon, Fontanil-Cornillon, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14607 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01);
Abstract

The invention concerns a pixel of an image array comprising one or more charge storage structures (), each charge storage structure comprising: a first charge storage trench () doped to have a first conductivity type and having a first end () configured to receive charge accumulated by a photodiode; a second charge storage trench () doped to have the first conductivity type; and a first transfer gate () linking a second end () of the first charge storage trench () and the second charge storage trench () to a sense node (), wherein the first and second charge storage trenches are linked together by a linking channel () doped to have the first conductivity type and bordering a portion of an edge of the transfer gate ().


Find Patent Forward Citations

Loading…