The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Aug. 01, 2016
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Hajime Ikeda, Yokohama, JP;

Tatsuhito Goden, Machida, JP;

Yoichi Wada, Yokohama, JP;

Keisuke Ota, Tokyo, JP;

Toshinori Hasegawa, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G01S 7/487 (2006.01); G01S 17/10 (2006.01); H01L 31/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14605 (2013.01); G01S 7/4876 (2013.01); G01S 17/10 (2013.01); H01L 27/14636 (2013.01); H01L 27/14641 (2013.01); H01L 31/162 (2013.01);
Abstract

A photoelectric conversion device includes a first photoelectric conversion portion configured to generate electrons; a second photoelectric conversion portion configured to generate holes; a charge-to-voltage conversion portion including an n-type first semiconductor region configured to collect the generated electrons and a p-type second semiconductor region configured to collect the generated holes, the charge-to-voltage conversion portion being configured to convert a charge that is based on the electrons and the holes to a voltage; and a signal generation portion configured to generate a signal corresponding to the voltage, the signal generation portion including an amplification transistor.


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