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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10468433 B1

PDFFull Text
Date of Patent:
Nov. 05, 2019

Filed:

Jun. 22, 2018

Three-dimensional semiconductor devices including gate electrodes

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Kwang Soo Kim, Hwaseong-si, KR;

Young Jin Jung, Hwaseong-si, KR;

Jae Duk Lee, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Minh Loan Tran

Int. Cl.
CPC ...
H01L 27/1159 (2017.01); H01L 27/11597 (2017.01); H01L 27/11578 (2017.01); H01L 27/11568 (2017.01); H01L 27/11556 (2017.01); H01L 27/11551 (2017.01); H01L 27/11595 (2017.01); H01L 27/11526 (2017.01); H01L 27/11521 (2017.01); H01L 27/11519 (2017.01); H01L 27/11548 (2017.01); H01L 27/1156 (2017.01); H01L 27/11565 (2017.01); H01L 27/11575 (2017.01); H01L 27/11582 (2017.01); H01L 27/02 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11597 (2013.01); H01L 27/0207 (2013.01); H01L 27/1156 (2013.01); H01L 27/1159 (2013.01); H01L 27/11519 (2013.01); H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 27/11548 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11568 (2013.01); H01L 27/11575 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 27/11595 (2013.01); H01L 29/1037 (2013.01); H01L 29/4234 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 29/66545 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01);
Abstract

A three-dimensional semiconductor device is provided including main separation structures disposed on a substrate, and extending in a first direction, parallel to a surface of the substrate; gate electrodes disposed between the main separation structures; a first secondary separation structure penetrating through the gate electrodes, between the main separation structures, and including a first linear portion and a second linear portion, having end portions opposing each other; and second secondary separation structures disposed between the first secondary separation structure and the main separation structures, and penetrating through the gate electrodes. The second secondary separation structures have end portions opposing each other between the second linear portion and the main separation structures.

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