The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Jul. 05, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jung Ho Kim, Seongnam-si, KR;
BiO Kim, Seoul, KR;
Hyung Joon Kim, Yongin-si, KR;
Young Seon Son, Hwaseong-si, KR;
Su Jin Shin, Osan-si, KR;
Jae Young Ahn, Seongnam-si, KR;
Ju Mi Yun, Pocheon-si, KR;
HanMei Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes gate electrodes vertically stacked on a substrate, and channel holes passing through the gate electrodes to extend perpendicularly to the substrate and including a gate dielectric layer and a channel area. The gate dielectric layer may be formed of a plurality of layers, and at least one layer among the plurality of layers may have different thicknesses in different locations.