The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Dec. 07, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hee-wook You, Suwon-si, KR;

Won-chul Lee, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 27/02 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10814 (2013.01); H01L 27/0207 (2013.01); H01L 27/10823 (2013.01); H01L 27/10852 (2013.01); H01L 27/10876 (2013.01); H01L 28/90 (2013.01); H01L 28/91 (2013.01);
Abstract

The invention provides a semiconductor device including a capacitor capable of securing capacity and exhibiting improved reliability and a semiconductor package comprising the same. The semiconductor device includes: a substrate having a cell block; a plurality of capacitors, which are in the cell block of the substrate and have first electrodes; and a support pattern, which contacts sidewalls of the first electrodes of the plurality of capacitors and supports the plurality of capacitors, wherein the support pattern includes an upper support pattern including: a first upper pattern having a plate-like structure connected as a whole in the cell block; and a second upper pattern, which contacts a bottom surface of the first upper pattern and has a top surface having a smaller area than the bottom surface of the first upper pattern, the upper support pattern contacting sidewalls of upper ends of the first electrodes.


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