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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10468411 B1

PDFFull Text
Date of Patent:
Nov. 05, 2019

Filed:

Jun. 25, 2018

Semiconductor device having a multi-portion gate electrode

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Wonkeun Chung, Seoul, KR;

Gigwan Park, Hwaseong-si, KR;

Huyong Lee, Seoul, KR;

TaekSoo Jeon, Yongin-si, KR;

Sangjin Hyun, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Onello & Mello, LLP

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/43 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/82345 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/4966 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/28114 (2013.01); H01L 29/435 (2013.01); H01L 29/495 (2013.01); H01L 29/4958 (2013.01);
Abstract

A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.

Find Patent Forward Citations

Chung, Wonkeun. (2019). Semiconductor device having a multi-portion gate electrode (U.S. Patent No. 10468411). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10468411

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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