The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Dec. 13, 2016
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Koji Yamazaki, Chiyoda-ku, JP;

Tomoaki Kato, Chiyoda-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/13 (2006.01); H01L 21/52 (2006.01); H01L 21/285 (2006.01); H01L 21/78 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 21/28556 (2013.01); H01L 21/52 (2013.01); H01L 21/78 (2013.01); H01L 23/13 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 29/1608 (2013.01); H01L 2224/27452 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/29666 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83193 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/0134 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01);
Abstract

A method of manufacturing a semiconductor device of the present disclosure includes the steps of sequentially forming an adhesion-improving film, a Pt film, a Sn film, and an Au film on a semiconductor wafer through vapor deposition; dicing the semiconductor wafer to obtain a semiconductor element; sequentially forming a Ni film and an Au film on a substrate through vapor deposition; and laminating the semiconductor element and the substrate so that the Au film formed on the semiconductor element and the Au film formed on the substrate face each other, followed by joining the semiconductor element and the substrate through heating.


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