Semiconductor device and semiconductor detector, methods for manufacturing same, and semiconductor chip or substrate

Abstract

In a method for manufacturing a radiation detector, counter pixel electrodesare formed on a counter substrateat positions facing a plurality of pixel electrodes formed on a signal reading substrate, and wall bump electrodesare further formed on the counter pixel electrodes. In order to achieve the above, a resist R is applied, and the resist R is exposed to light to form openings O. When Au sputter deposition is performed on the openings O, only some of the Au is deposited on the bottom surface in the openings O as the counter pixel electrodes. The rest of the Au is not deposited on the bottom surface in the openings O, and the most of the remaining Au adheres to the inner walls of the openings O to form wall bump electrodes. The bump electrodesare cylindrical, making it possible to reduce the pressure acting on the signal reading substrate by an extent corresponding to the decrease in the bonding area in comparison to conventional bump-shaped bump electrodes. The decrease in the bonding area also makes it possible to correspondingly improve the reproducibility of forming the diameter of the electrodes, and make reliable connection possible.