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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10468358 B1

PDFFull Text
Date of Patent:
Nov. 05, 2019

Filed:

Aug. 15, 2017

Semiconductor device with metal layer along a step portion

Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Toru Hiyoshi, Osaka, JP;

Taku Horii, Osaka, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Attorneys:

Baker Botts L.L.P.

Michael A. Sartori

Primary Examiner:

Robert T Huber

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 23/58 (2006.01); H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 21/78 (2006.01); H01L 29/20 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/0485 (2013.01); H01L 21/32051 (2013.01); H01L 21/78 (2013.01); H01L 23/585 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0638 (2013.01); H01L 29/0661 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/66068 (2013.01); H01L 29/7395 (2013.01); H01L 29/7811 (2013.01); H01L 21/561 (2013.01); H01L 23/3192 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/94 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor layer including a wide bandgap semiconductor, the semiconductor layer having an element region and an outer peripheral region surrounding an outer periphery of the element region when viewed two-dimensionally, forming a step portion surrounding the outer periphery of the element region in the outer peripheral region, and forming a metal layer along the step portion. The step portion has a sidewall recessed downward from a main surface of the element region in a cross section parallel to a thickness direction of the semiconductor layer, and the metal layer extends to cover at least a portion of the sidewall. The method of manufacturing a semiconductor device further includes the step of dividing the semiconductor layer into the element regions on an outside of the step portion when viewed from the element region.

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