The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Jul. 29, 2018
Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventors:

Hiroya Shimoyama, Tokyo, JP;

Hiroyuki Nakamura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H05K 7/20 (2006.01); H01L 25/07 (2006.01); H01L 23/36 (2006.01); H02M 7/537 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49575 (2013.01); H01L 23/3121 (2013.01); H01L 23/36 (2013.01); H01L 23/3675 (2013.01); H01L 23/49503 (2013.01); H01L 23/49524 (2013.01); H01L 23/49541 (2013.01); H01L 23/49562 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/40 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/072 (2013.01); H05K 7/209 (2013.01); H01L 23/49555 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/40137 (2013.01); H01L 2224/40177 (2013.01); H01L 2224/40245 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48101 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/73263 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14252 (2013.01); H01L 2924/181 (2013.01); H02M 7/537 (2013.01);
Abstract

Performance of a semiconductor device is enhanced. A semiconductor device is a semiconductor device obtained by sealing in a sealing portion first, second, and third semiconductor chips each incorporating a power transistor for high-side switch, fourth, fifth, and sixth semiconductor chips each incorporating a power transistor for low-side switch, and a semiconductor chip incorporating a control circuit controlling these chips. The source pads of the fourth, fifth, and sixth semiconductor chips are electrically coupled to a plurality of leads LDand a plurality of leads LDvia a metal plate. As viewed in a plane, the leads LDintersect with a side MRdof the sealing portion and the leads LDintersect with a side MRdof the sealing portion.


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