The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Sep. 12, 2017
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Ippei Kume, Yokkaichi, JP;

Kazuhiko Nakamura, Nagoya, JP;

Yuki Noda, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/3065 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 21/311 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/3065 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 23/5283 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 23/5329 (2013.01); H01L 23/53209 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 29/0649 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2924/14511 (2013.01);
Abstract

A semiconductor device according to an embodiment includes a semiconductor substrate including a first face having semiconductor elements, and a second face on an opposite side to the first face. A first insulating film is located on the first face of the semiconductor substrate. A conductor is located on the first insulating film. A metal electrode is located between the first face and the second face and passes through the semiconductor substrate to be in contact with the conductor. A second insulating film is located between the metal electrode and the semiconductor substrate. A boundary face between the first insulating film and the second insulating film is located on a side of the conductor relative to the first face of the semiconductor substrate and is inclined to approach the conductor toward a center portion of the metal electrode.


Find Patent Forward Citations

Loading…