The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Aug. 15, 2017
Abb Schweiz Ag, Baden, CH;
Charalampos Papadopoulos, Lenzburg, CH;
Munaf Rahimo, Uezwil, CH;
ABB Schweiz AG, Baden, CH;
Abstract
A power semiconductor device is provided comprising a wafer, wherein in a termination region of the device a passivation layer structure is formed at least on a portion of a surface of the wafer and the passivation layer structure comprises in an order from the surface of the wafer in a direction away from the wafer a semi-insulating layer, a silicon nitride layer, an undoped silicate glass layer and an organic dielectric layer. The silicon nitride layer has a layer thickness of at least 0.5 μm. The organic dielectric layer its attached to the undoped silicate glass layer and the undoped silicate glass layer is attached to the silicon nitride layer.