The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Apr. 07, 2016
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Yinghai Ma, Beijing, CN;

Liangjian Li, Beijing, CN;

Yueping Zuo, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01J 37/32 (2006.01); G02F 1/1368 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/3244 (2013.01); H01J 37/32871 (2013.01); H01L 21/76805 (2013.01); G02F 1/1368 (2013.01); G02F 2202/104 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3347 (2013.01); H01L 27/1259 (2013.01);
Abstract

A dry etching method includes performing at least two etching steps, and further includes injecting protective gas into an etch chamber for processing between any two successive etching steps, wherein the protective gas generates plasma to neutralize electrons accumulated on a side wall of an etching trench. According to the present disclosure, hydrogen plasma is added in an etching process to remove the electrons accumulated on the side wall of the etching trench so as to reduce the microetching effect in multiple etching. In this way, process stability and reliability of a display substrate are improved.


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