The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Jun. 05, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jae Soon Lim, Seoul, KR;
Gyu Hee Park, Hwaseong-si, KR;
Youn Joung Cho, Hwaseong-si, KR;
Hyun Suk Lee, Hwaseong-si, KR;
Gi Hee Cho, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); C30B 25/14 (2006.01); C30B 29/06 (2006.01); H01L 21/768 (2006.01); H01L 23/29 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30 (2013.01); C30B 25/14 (2013.01); C30B 29/06 (2013.01); H01L 21/76829 (2013.01); H01L 21/76834 (2013.01); H01L 23/291 (2013.01); H01L 23/528 (2013.01); H01L 23/5283 (2013.01);
Abstract
A method of fabricating a semiconductor device includes feeding a suppression gas, a source gas, a reactive gas, and a purge gas including an inert gas, into a process chamber in which a substrate is disposed. The suppression gas suppresses the physical adsorption of the source gas onto the substrate. As a result, a thin film is formed on the substrate.