The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Oct. 19, 2017
Applicant:
Hitachi, Ltd., Tokyo, JP;
Inventors:
Assignee:
HITACHI, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 23/34 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4141 (2013.01); H01L 29/4966 (2013.01); H01L 29/78 (2013.01); H01L 23/345 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01);
Abstract
In a gas sensor using a first FET-type sensor for a sensor unit, a gas density measurement unit measures a gas density of gas to be detected at a predetermined time on the basis of a first threshold change as a difference between a first threshold voltage applied to a first gate layer when a first source-drain current is a first threshold current while the gas to be detected is not present in the atmosphere and a second threshold voltage applied to the first gate layer when the first source-drain current is the first threshold current at the predetermined time while the gas to be detected is present in the atmosphere, and a temporal differentiation of the first threshold change.