The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Oct. 31, 2016
Applicant:

Lawrence Livermore National Security, Llc, Livermore, CA (US);

Inventors:

Isaac Seetho, Hayward, CA (US);

Maurice B. Aufderheide, Livermore, CA (US);

Stephen G. Azevedo, Livermore, CA (US);

William D. Brown, Antioch, CA (US);

Kyle Champley, Walnut Creek, CA (US);

Daniel Schneberk, Ripon, CA (US);

G. Patrick Roberson, Livermore, CA (US);

Jeffrey S. Kallman, Pleasanton, CA (US);

Harry E. Martz, Jr., Livermore, CA (US);

Jerel A. Smith, Boulder Creek, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/046 (2018.01); G01N 23/083 (2018.01); G06T 11/00 (2006.01);
U.S. Cl.
CPC ...
G01N 23/046 (2013.01); G01N 23/083 (2013.01); G06T 11/005 (2013.01); G01N 2223/063 (2013.01); G01N 2223/423 (2013.01); G06T 2207/10081 (2013.01); G06T 2211/408 (2013.01); G06T 2211/416 (2013.01);
Abstract

A system for characterizing the material of an object scanned via a dual-energy computed tomography scanner is provided. The system generates photoelectric and Compton sinograms based on a photoelectric-Compton decomposition of low-energy and high-energy sinograms generated from the scan and based on a scanner spectral response model. The system generates a Compton volume with Compton attenuation coefficients from the Compton sinogram and a photoelectric volume with photoelectric attenuation coefficients from the photoelectric sinogram. The system generates an estimated effective atomic number for a voxel and an estimated electron density for the voxel from the Compton attenuation coefficient and photoelectric coefficient for the voxel and scanner-specific parameters. The system then characterizes the material within the voxel based on the estimated effective atomic number and estimated electron density for the voxel. This information can be used to provide a mapping of known effective atomic numbers and known electron densities to known materials.


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