The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Apr. 04, 2018
Applicant:

Mellanox Technologies, Ltd., Yokneam, IL;

Inventors:

Alexei Sirbu, Cugy, CH;

Vladimir Iakovlev, Yokneam, CH;

Yuri Berk, Kiryat Tivon, IL;

Elad Mentovich, Tel Aviv, IL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/42 (2006.01); H01S 5/183 (2006.01); H01S 5/187 (2006.01); H01S 5/042 (2006.01); H01S 5/022 (2006.01); H01S 5/028 (2006.01); H01S 5/40 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/423 (2013.01); H01S 5/028 (2013.01); H01S 5/0224 (2013.01); H01S 5/02248 (2013.01); H01S 5/02284 (2013.01); H01S 5/02288 (2013.01); H01S 5/02292 (2013.01); H01S 5/0421 (2013.01); H01S 5/0425 (2013.01); H01S 5/187 (2013.01); H01S 5/18305 (2013.01); H01S 5/18308 (2013.01); H01S 5/18355 (2013.01); H01S 5/18375 (2013.01); H01S 5/18377 (2013.01); H01S 5/34306 (2013.01); H01S 5/4087 (2013.01); H01S 2301/14 (2013.01);
Abstract

A vertical-cavity surface-emitting laser (VCSEL), substrate emitting VCSEL, and multi-beam emitting device and corresponding manufacturing processes are provided. An example VCSEL comprises a substrate having a first surface and a second surface; an output coupling mirror disposed on the second surface of the substrate; a high reflectivity mirror; and an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror. The active cavity material structure comprises a first current-spreading layer, a second current-spreading layer, an active region disposed between the first current-spreading layer and the second current-spreading layer, and a tunnel junction overgrown by the second current spreading layer, wherein the tunnel junction is disposed adjacent the active region. The VCSEL is configured to emit radiation outward through the first surface of the substrate.


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