The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Jul. 26, 2018
Applicant:

Canon Anelva Corporation, Kawasaki-shi, JP;

Inventors:

Hiroyuki Hosoya, Kawasaki, JP;

Yoshinori Nagamine, Kawsaki, JP;

Assignee:

CANON ANELVA CORPORATION, Kawasaki-Shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); C23C 14/18 (2006.01); C23C 14/34 (2006.01); C23C 14/54 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); C23C 14/185 (2013.01); C23C 14/3464 (2013.01); C23C 14/541 (2013.01); H01L 43/10 (2013.01);
Abstract

A manufacturing method of a magneto-resistive effect device, the manufacturing method includes steps of: forming an Mg film on a substrate on which a reference layer is formed and oxidizing the Mg film to form an MgO layer on the reference layer; heating the substrate on which the MgO layer is formed; after the step of heating, forming an Mg layer on the MgO layer; cooling the substrate on which the Mg layer is formed; and forming a free layer on the Mg layer in a state where the substrate is cooled by the cooling step, and the step of forming the Mg layer, the step of cooling, and the step of forming the free layer are performed in the process same process chamber.


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