The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Jun. 05, 2018
International Business Machines Corporation, Armonk, NY (US);
Prasad Bhosale, Slingerlands, NY (US);
Raghuveer R. Patlolla, Guilderland, NY (US);
Michael Rizzolo, Albany, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A substantially flat bottom electrode for magnetoresistive random access memory (MRAM) devices includes three components: a recessed bulk conductive material such as copper, a conductive liner lining the recess, and a cap layer, wherein the conductive liner is a harder material than the cap layer. The cap layer and the dielectric layer are coplanar having a height differential of less than 3 nanometers. The conductive liner has a lower chemical mechanical planarization removal rate. Also provided are processes for forming the bottom electrode.