The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Nov. 07, 2017
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Yuta Oka, Tokushima, JP;

Masatsugu Ichikawa, Tokushima, JP;

Assignee:

NICHIA CORPORATION, Anan-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/64 (2010.01); H01L 33/48 (2010.01); H01L 33/50 (2010.01); H01L 33/56 (2010.01); H01L 33/62 (2010.01); H01L 25/075 (2006.01); H01L 33/60 (2010.01); H01L 33/54 (2010.01);
U.S. Cl.
CPC ...
H01L 33/647 (2013.01); H01L 33/486 (2013.01); H01L 33/502 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01); H01L 25/0753 (2013.01); H01L 33/54 (2013.01); H01L 33/60 (2013.01); H01L 33/64 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01); H01L 2933/0075 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes disposing a substrate metal film on an upper surface of a substrate made of a metal; disposing a first element metal film on a lower surface of a first element; disposing a second element metal film on a lower surface of a second element; bonding the first element and the second element to the substrate so that an upper surface of the substrate metal film is in contact with a lower surface of the first element metal film and a lower surface of the second element metal film; oxidizing at least a portion of a region of the upper surface of the substrate metal film other than regions in contact with the first element metal film and the second element metal film; and disposing a wiring electrically connecting the first element and the second element, across and above the region oxidized.


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