IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10461220 B1

PDFFull Text
Date of Patent:
Oct. 29, 2019

Filed:

Dec. 22, 2014

Method of manufacturing a semiconductor device and a semiconductor device

Applicant:

Imec, Leuven, BE;

Inventor:

Kai Cheng, Leuven, BE;

Assignee:

IMEC, Leuven, BE;

Attorney:

Knobbe, Martens, Olson & Bear LLP

Primary Examiner:

Lauren R Bell

Int. Cl.
CPC ...
H01L 33/22 (2010.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 33/18 (2010.01); H01L 33/32 (2010.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 21/0259 (2013.01); H01L 21/02639 (2013.01); H01L 21/02664 (2013.01); H01L 33/0062 (2013.01); H01L 33/0066 (2013.01); H01L 33/0075 (2013.01); H01L 33/18 (2013.01); H01L 33/32 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02587 (2013.01); H01L 21/02609 (2013.01); H01L 31/0236 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0091 (2013.01);
Abstract

A method of manufacturing a semiconductor device and the device resulted thereof is disclosed. In one aspect, the device has a heterogeneous layer stack of one or more III-V type materials, at least one transmission layer of the layer stack having a roughened or textured surface for enhancement of light transmission. The method includes (a) growing the transmission layer of a III-V type material, (b) providing a mask layer on the transmission layer, the mask layer leaving first portions of the transmission layer exposed, and (c) partially decomposing the first exposed portions of the transmission layer. Suitably redeposition occurs in a single step with decomposition, so as to obtain a textured surface based on crystal facets of a plurality of grown crystals. The resulting device has a light-emitting element. The transmission layer hereof is suitably present at the top side.

Find Patent Forward Citations

Loading…