The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Dec. 19, 2017
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Yoshiki Saito, Kiyosu, JP;
Daisuke Shinoda, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
To provide a method for producing a Group III nitride semiconductor light-emitting device using a substrate containing Al such as AlN substrate while suppressing polarity inversion. The production method comprising an oxide film formation step, a first Group III nitride layer formation step, a first semiconductor layer formation step, a light-emitting layer formation step, and a second semiconductor layer formation step. In the production method, an AlN substrate or AlGaN substrate is employed. In the oxide film formation step, an oxide film containing Al atoms, N atoms, and O atoms is formed. In the first Group III nitride layer formation step, an AlN layer or AlGaN layer is formed as the first Group III nitride layer under the condition that the substrate temperature 1200° C. to 1450° C.