The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Sep. 01, 2015
Applicant:
Samsung Display Co., Ltd., Yongin-si, KR;
Inventors:
Je-Hun Lee, Seoul, KR;
Eun-Hyun Kim, Suwon-si, KR;
Sang-Won Shin, Yongin-si, KR;
Eun-Young Lee, Seoul, KR;
Assignee:
Samsung Display Co., Ltd., Yongin-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/443 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); H01L 21/02244 (2013.01); H01L 21/02255 (2013.01); H01L 21/443 (2013.01); H01L 27/1248 (2013.01); H01L 29/42384 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01);
Abstract
A semiconductor device may include a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate to cover the gate electrode, an active layer including an oxide semiconductor disposed on the gate insulation layer, an insulating interlayer disposed on the gate insulation layer to cover the active layer, a protection structure including a plurality of metal oxide layers disposed on the insulating interlayer, and a source electrode and a drain electrode disposed on the protection structure.