The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Jun. 08, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/207 (2006.01); H01L 21/306 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/30612 (2013.01); H01L 29/045 (2013.01); H01L 29/0676 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/20 (2013.01); H01L 29/207 (2013.01); H01L 29/66522 (2013.01); H01L 29/66666 (2013.01); H01L 29/42376 (2013.01);
Abstract
An integrated circuit device may include a substrate including a main surface, a compound semiconductor nanowire extending from the main surface in a first direction perpendicular to the main surface and including a first section and a second section alternately arranged in the first direction, a gate electrode covering the first section, and a gate dielectric layer between the first section and the gate electrode. The first section and the second section may have the same composition as each other and may have different crystal phases from each other.