The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Jan. 08, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventor:

Jong-chul Park, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H01L 27/2427 (2013.01); H01L 27/2481 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01); G11C 2013/008 (2013.01); G11C 2213/71 (2013.01); G11C 2213/73 (2013.01);
Abstract

A variable resistance memory device including a first conductive line extending in a first direction on a substrate, a second conductive line on the first conductive line and extending in a second direction crossing the first direction, and a memory cell pillar connected to the first conductive line and the second conductive line at a crossing point therebetween and including a heating electrode layer and a variable resistance layer in contact with the heating electrode layer such that both sidewalls of the heating electrode layer are aligned with both sidewalls of the first conductive line in the first direction.


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