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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10461074 B1

PDFFull Text
Date of Patent:
Oct. 29, 2019

Filed:

Jun. 28, 2018

Field-effect semiconductor device having a heterojunction contact

Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventor:

Wolfgang Werner, Munich, DE;

Assignee:

Infineon Technologies Austria AG, Villach, AT;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Marcos D Pizarro

Assistant Examiner:

Quinton A Brasfield

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/06 (2006.01); H01L 29/872 (2006.01); H01L 29/78 (2006.01); H01L 29/267 (2006.01); H01L 29/808 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 29/20 (2006.01); H01L 29/861 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 29/04 (2013.01); H01L 29/1095 (2013.01); H01L 29/1604 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/267 (2013.01); H01L 29/66068 (2013.01); H01L 29/66431 (2013.01); H01L 29/66734 (2013.01); H01L 29/66893 (2013.01); H01L 29/66909 (2013.01); H01L 29/66924 (2013.01); H01L 29/7395 (2013.01); H01L 29/78 (2013.01); H01L 29/7805 (2013.01); H01L 29/7806 (2013.01); H01L 29/7813 (2013.01); H01L 29/8083 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01); H01L 2924/0002 (2013.01);
Abstract

According to an embodiment of a semiconductor device, the semiconductor device includes a semiconductor body having a main surface, the semiconductor body including a drift region of monocrystalline SiC, the drift region being of a first conductivity type, and a metallization arranged at the main surface. In a cross-section which is substantially orthogonal to the main surface, the semiconductor body further includes a contact region of the monocrystalline SiC directly adjoining the drift region and the metallization, and an anode region of a semiconductor material having a lower band-gap than the monocrystalline SiC. The contact region is of a second conductivity type. The anode region is in ohmic contact with the metallization and forms a heterojunction with the drift region.

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