The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Jul. 01, 2016
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Yasumichi Hatanaka, Chiyoda-ku, JP;
Kozo Harada, Chiyoda-ku, JP;
Hiroyuki Harada, Chiyoda-ku, JP;
Takashi Nishimura, Chiyoda-ku, JP;
Masayuki Mafune, Chiyoda-ku, JP;
Koji Yamada, Chiyoda-ku, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Abstract
A power semiconductor device including an insulating substrate having a metal layer formed on an upper surface thereof, a semiconductor element and a main electrode bonded to the metal layer, a metal wire connecting the metal layer with the semiconductor element, a metal member bonded to a lower surface side of the insulating substrate, a case member surrounding the insulating substrate and being in contact with a surface of the metal member bonded to the insulating substrate, and a sealing resin which fills a region surrounded by the metal member and the case member and has a resin strength of 0.12 MPa or higher at room temperature, a microcrystallization temperature of −55° C. or lower, and a needle penetration of 30 to 50 after storage at 175° C. for 1000 hours and seals the insulating substrate, the metal layer, the semiconductor element, the metal wire, and the main electrode.