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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10461042 B1

PDFFull Text
Date of Patent:
Oct. 29, 2019

Filed:

Jan. 31, 2016

Semiconductor module

Applicant:

Shindengen Electric Manufacturing Co., Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Kosuke Ikeda, Saitama, JP;

Yuji Morinaga, Saitama, JP;

Assignee:

SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Mohammed Shamsuzzaman

Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 23/29 (2006.01); H01L 23/48 (2006.01); H01L 25/18 (2006.01); H01L 23/373 (2006.01); H01L 23/482 (2006.01); H01L 25/065 (2006.01); H01L 23/433 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/16 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 23/29 (2013.01); H01L 23/3121 (2013.01); H01L 23/3135 (2013.01); H01L 23/3735 (2013.01); H01L 23/4334 (2013.01); H01L 23/48 (2013.01); H01L 23/4822 (2013.01); H01L 23/49833 (2013.01); H01L 25/0657 (2013.01); H01L 25/16 (2013.01); H01L 25/162 (2013.01); H01L 25/18 (2013.01); H01L 23/49811 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/06555 (2013.01); H01L 2225/06579 (2013.01); H01L 2225/06582 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/19107 (2013.01);
Abstract

A semiconductor module includes: a first substrate having a first insulating substrate and a first conductor layer; a power device part having a first electrode, a second electrode and a gate electrode; a second substrate having a second insulating substrate, a second conductor layer and a third conductor layer wherein a hole is formed in the second insulating substrate, the second conductor layer has a bonding portion and a surrounding wall portion; an inner resin portion; a control IC; and an outer resin portion, wherein the first substrate, the power device part, the second substrate and the control IC are stacked in this order, a connector is disposed in the inside of the hole, and the gate electrode is electrically connected to a control signal output terminal of the control IC through a connector.

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