The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Jun. 14, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Eui Bok Lee, Hwaseong-si, KR;
Jong Min Baek, Hwaseong-si, KR;
Sang Hoon Ahn, Hwaseong-si, KR;
Hyeok Sang Oh, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a lower insulating layer disposed on a substrate. A conductive pattern is formed in the lower insulating layer. A middle insulating layer is disposed on the lower insulating layer and the conductive pattern. A via control region is formed in the middle insulating layer. An upper insulating layer is disposed on the middle insulating layer and the via control region. A via plug is formed to pass through the via control region and to be connected to the conductive pattern. The via control region has a lower etch rate than the middle insulating layer.