The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Feb. 23, 2018
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Morimichi Watanabe, Nagoya, JP;
Tsutomu Nanataki, Toyoake, JP;
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); C04B 35/111 (2006.01); C04B 35/101 (2006.01); C04B 35/634 (2006.01); C04B 35/64 (2006.01); B32B 18/00 (2006.01); C04B 35/626 (2006.01); C04B 35/638 (2006.01); C04B 35/645 (2006.01); C04B 37/00 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6833 (2013.01); B32B 18/00 (2013.01); C04B 35/101 (2013.01); C04B 35/111 (2013.01); C04B 35/1115 (2013.01); C04B 35/6262 (2013.01); C04B 35/6264 (2013.01); C04B 35/638 (2013.01); C04B 35/6342 (2013.01); C04B 35/64 (2013.01); C04B 35/645 (2013.01); C04B 37/005 (2013.01); H01L 21/6831 (2013.01); H01L 21/68757 (2013.01); C04B 2235/322 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3262 (2013.01); C04B 2235/445 (2013.01); C04B 2235/5292 (2013.01); C04B 2235/5296 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/6025 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6586 (2013.01); C04B 2235/72 (2013.01); C04B 2235/77 (2013.01); C04B 2235/786 (2013.01); C04B 2235/787 (2013.01); C04B 2235/96 (2013.01); C04B 2235/963 (2013.01); C04B 2237/064 (2013.01); C04B 2237/343 (2013.01); C04B 2237/52 (2013.01);
Abstract
An electrostatic chuck includes a dielectric layer including an oriented alumina sintered body having a degree of c-plane orientation of 5% or more, the degree of c-plane orientation being determined by a Lotgering method using an X-ray diffraction profile obtained by the irradiation of an X-ray in the 2θ range of 20° to 70°; a ceramic layer integrated with a surface disposed opposite a wafer placement surface of the dielectric layer; and an electrostatic electrode between the dielectric layer and the ceramic layer.