The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Mar. 31, 2017
Asm Ip Holding B.v., Almere, NL;
Steven R. A. Van Aerde, Tielt-Winge, BE;
Kelly Houben, Lubbeek, BE;
Maarten Stokhof, Winksele, BE;
Bert Jongbloed, Oud-Heverlee, BE;
Dieter Pierreux, Dilbeek, BE;
ASM IP Holding B.V., Almere, NL;
Abstract
Amorphous silicon-filled gaps may be formed having no or a low occurrence of voids in the amorphous silicon fill, while maintaining a smooth exposed silicon surface. A gap in a substrate may be filled with amorphous silicon by heating the substrate to a deposition temperature between 300 and 500° C. and providing a feed gas that comprises a first silicon reactant to deposit an amorphous silicon film into the gap with an hydrogen concentration between 0.1 and 10 at. %. The deposited silicon film may subsequently be annealed. After the anneal, any voids may be reduced in size and this reduction in size may occur to such an extent that the voids may be eliminated.