The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Oct. 16, 2015
Applicant:

Hitachi, Ltd., Tokyo, JP;

Inventors:

Toshiya Doi, Kyoto, JP;

Shigeru Horii, Kyoto, JP;

Toshiaki Kusunoki, Tokyo, JP;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 6/06 (2006.01); C01B 35/04 (2006.01); H01F 10/10 (2006.01); H01F 41/14 (2006.01); H01L 39/14 (2006.01); H01L 39/24 (2006.01);
U.S. Cl.
CPC ...
H01F 6/06 (2013.01); C01B 35/04 (2013.01); H01F 10/10 (2013.01); H01F 41/14 (2013.01); H01L 39/141 (2013.01); H01L 39/2487 (2013.01); C01P 2006/40 (2013.01);
Abstract

An object of the invention is to provide: an MgBsuperconducting thin-film wire that exhibits excellent Jcharacteristics even under a 20 K magnetic field; and a method for producing thereof. The MgBsuperconducting thin-film wire includes a long substrate and an MgBthin film formed on the long substrate. The MgBthin film has a microtexture such that MgBcolumnar crystal grains stand densely together on the surface of the long substrate, and has Tof 30 K or higher. In grain boundary regions of the MgBcolumnar crystal grains, a predetermined transition metal element is dispersed and segregated. The predetermined transition metal element is an element having a body-centered cubic lattice structure.


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