The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Mar. 29, 2017
Applicant:
Seagate Technology Llc, Cupertino, CA (US);
Inventors:
Earl T. Cohen, Oakland, CA (US);
Hao Zhong, Milpitas, CA (US);
Assignee:
Seagate Technology LLC, Cupertino, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G01R 19/00 (2006.01); G11C 29/02 (2006.01); G11C 16/28 (2006.01); G11C 7/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3495 (2013.01); G01R 19/0084 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 16/28 (2013.01); G11C 16/349 (2013.01); G11C 16/3418 (2013.01); G11C 16/3427 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 7/14 (2013.01);
Abstract
Methods, systems and computer-readable storage media for selecting a retention drift predictor scheme, reading retention drift history associated with reference cells of a plurality of groups of pages of a non-volatile memory (NVM), and predicting values for an optimal read threshold voltage of at least some of the plurality of groups of pages. The predicting of values for an optimal read threshold voltage may be based at least on the selected retention drift predictor scheme and the read retention drift history.