The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Sep. 11, 2015
Massachusetts Institute of Technology, Cambridge, MA (US);
Uwe Bauer, Cambridge, MA (US);
Geoffrey S. D. Beach, Winchester, MA (US);
Massachusetts Institute of technology, Cambridge, MA (US);
Abstract
Systems, methods, and apparatus are provided for tuning a memristive property of a device. The device () includes a layer of a dielectric material () disposed over and forming an interface with a layer of an electrically conductive material (), and a gate electrode () disposed over the dielectric material. The dielectric material layer includes at least one ionic species () having a high ion mobility. The electrically conductive material is configured such that a potential difference applied to the device can cause the at least one ionic species to migrate reversibly across the interface into or out of the electrically conductive material layer, to modify the resistive state of the electrically conductive material layer.