The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Aug. 06, 2018
Applicant:

Globalfoundries, Inc., Grand Cayman, KY;

Inventor:

Yentsai Huang, Malta, NY (US);

Assignee:

GLOBALFOUNDARIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); G06F 11/07 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1659 (2013.01); G06F 11/0727 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 13/004 (2013.01);
Abstract

Integrated circuits including memory cells and methods for operating memory cells are provided. In an embodiment, a method is provided for operating a memory including a plurality of operational memory cells. The method includes providing a word line voltage on a selected word line corresponding to a selected operational memory cell of the plurality of operational memory cells and to a corresponding reference memory cell. The method includes applying an operational bias current on an operational bit line to the selected operational memory cell. Also, the method includes scanning a reference bias current from a first value to a second value on a reference bit line to the reference memory cell. Further, the method includes comparing reference cell currents on the reference bit line with an operational cell current on the operational bit line to determine a logic state of the selected operational memory cell.


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