The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Aug. 13, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Jumpei Sato, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 8/08 (2006.01); G11C 11/4097 (2006.01); G11C 11/4091 (2006.01); G11C 11/4096 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); G11C 8/08 (2013.01); G11C 11/4074 (2013.01); G11C 11/4091 (2013.01); G11C 11/4096 (2013.01); G11C 11/4097 (2013.01);
Abstract

A semiconductor memory device includes n interconnect layers above a substrate; and a first interconnect region between an end of a control circuit and an end of the substrate in a direction of a first axis beside a first pad region in a direction of a second axis. The n interconnect layers are located at different levels from the substrate. Each of the n interconnect layers includes an interconnect. The first interconnect region includes no transistor, and no contact coupled to the substrate. The first interconnect region includes an interconnect extending along the second axis in m (m is a natural number equal to or larger than 3, larger than n/2, and equal to or smaller than n) interconnect layers of the n interconnect layers.


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