The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
May. 28, 2019
Applicant:
Numem Inc., Sunnyvale, CA (US);
Inventor:
Nilesh A. Gharia, Morgan Hill, CA (US);
Assignee:
NUMEM INC., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G01R 31/317 (2006.01); G11C 13/00 (2006.01); G11C 11/16 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5022 (2013.01); G01R 31/31703 (2013.01); G06F 17/5031 (2013.01); G06F 17/5045 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/5607 (2013.01); G11C 11/5678 (2013.01); G11C 13/004 (2013.01); G11C 13/0038 (2013.01); G11C 13/0061 (2013.01); G11C 13/0069 (2013.01); G06F 2217/02 (2013.01); G06F 2217/06 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0054 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/79 (2013.01);
Abstract
Systems, methods and devices are disclosed that may a user to specify various layout and operational parameters of a resistive-based memory array in a manner that accommodates the unique characteristics of resistance-based memory cells and magnetic-based memory cells.