The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Apr. 26, 2019
Applicant:

Japan Display Inc., Tokyo, JP;

Inventors:

Hajime Watakabe, Tokyo, JP;

Isao Suzumura, Tokyo, JP;

Hirokazu Watanabe, Tokyo, JP;

Akihiro Hanada, Tokyo, JP;

Assignee:

Japan Display Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/12 (2006.01); G02F 1/1368 (2006.01); H01L 27/12 (2006.01); H01L 51/50 (2006.01); H01L 29/786 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); H01L 21/8234 (2013.01); H01L 27/12 (2013.01); H01L 29/786 (2013.01); H01L 51/50 (2013.01); G02F 2001/13685 (2013.01);
Abstract

A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.


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