The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Jul. 05, 2013
Ching-chiun Wang, Miaoli County, TW;
Chih-yung Huang, Taichung County, TW;
Kung-liang Lin, Hsinchu, TW;
Jung-chen Chien, Jhubei, TW;
Chen-der Tsai, Hsinchu County, TW;
Chien-chih Chen, Taichung County, TW;
Ching-Chiun Wang, Miaoli County, TW;
Chih-Yung Huang, Taichung County, TW;
Kung-Liang Lin, Hsinchu, TW;
Jung-Chen Chien, Jhubei, TW;
Chen-Der Tsai, Hsinchu County, TW;
Chien-Chih Chen, Taichung County, TW;
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsin-chu, TW;
Abstract
A gas shower device having gas curtain comprises a first gas shower unit for injecting a reaction gas, thereby forming a reaction gas region, and a second gas shower unit. The second gas shower unit arranged around a periphery of the first gas shower unit comprises a buffer gas chamber for providing a buffer gas, and a curtain distribution plate. The curtain distribution plate further comprises a plurality through holes for injecting the buffer gas, thereby forming a gas curtain around a periphery of the reaction gas region. In another embodiment, an apparatus for depositing film is provided by utilizing the gas shower device having gas curtain, wherein the gas curtain prevents the reaction gas in the reaction gas region from being affected directly by a vacuum pressure so that a residence time of reaction gas can be extended thereby increasing the utilization of reaction gas and film-forming efficiency.