The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2019

Filed:

May. 09, 2018
Applicant:

Khalifa University of Science and Technology, Abu Dhabi, AE;

Inventors:

Mihai Sanduleanu, Abu Dhabi, AE;

Shoeb Shaikh, Abu Dhabi, AE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/04 (2006.01); H03F 1/02 (2006.01); H04W 52/52 (2009.01); H04W 52/42 (2009.01); H03F 3/217 (2006.01); H03F 3/195 (2006.01); H03F 3/26 (2006.01); H03F 3/45 (2006.01); H03F 3/68 (2006.01);
U.S. Cl.
CPC ...
H04W 52/52 (2013.01); H03F 1/0227 (2013.01); H03F 1/0288 (2013.01); H03F 1/0294 (2013.01); H03F 3/195 (2013.01); H03F 3/2178 (2013.01); H03F 3/265 (2013.01); H03F 3/45183 (2013.01); H03F 3/68 (2013.01); H04B 1/04 (2013.01); H04B 1/0475 (2013.01); H04W 52/42 (2013.01); H03F 2200/102 (2013.01); H03F 2200/111 (2013.01); H04B 2001/045 (2013.01);
Abstract

A multi-standard transmitter architecture with digitally upconverted intermediate frequency (IF) outphased signals is disclosed. The transmitter architecture includes a Gallium Nitride (GaN) power amplifier (PA) circuit having a Current Mode Class-D (CMCD) configuration. The GaN PA circuit includes a lower switching device electrically coupled to an input to receive an input RF signal and an upper switching device to switchably electrically couple the first switching device to a power supply to drive an antenna circuit based on the input RF signal. Thus, a reconfigurable transmitter architecture is disclosed that utilizes a high-speed Gallium Nitride (GaN) driver to achieve a peak drain efficiency of at least 85% while delivering output power of 10 W at 1 GHz frequency, for example.


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