The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Jul. 07, 2016
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventor:
Hideki Ikedo, Kawasaki, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 5/374 (2011.01); H04N 5/361 (2011.01); H04N 5/225 (2006.01); G02B 27/00 (2006.01); H01L 27/146 (2006.01); H04N 5/357 (2011.01);
U.S. Cl.
CPC ...
H04N 5/374 (2013.01); G02B 27/0025 (2013.01); H01L 27/1461 (2013.01); H01L 27/14605 (2013.01); H01L 27/14607 (2013.01); H01L 27/14689 (2013.01); H04N 5/2253 (2013.01); H04N 5/2254 (2013.01); H04N 5/3572 (2013.01); H04N 5/361 (2013.01);
Abstract
An image sensor in which at least a portion of an imaging plane thereof has a curved shape, wherein the imaging plane includes a plurality of pixels that are two-dimensionally arranged, each of the plurality of pixels having: a photoelectric conversion region that is provided with an impurity region of a first conductivity type that is formed in a semiconductor substrate; and an impurity region of a second conductivity type that is formed on a substrate surface side of the photoelectric conversion region, and impurity concentration in the impurity region of the second conductivity type varies depending on a position on the imaging plane.