The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Apr. 28, 2017
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Xianzhi Dai, Shanghai, CN;
Antonio Gallerano, San Jose, CA (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H01L 27/0285 (2013.01);
Abstract
An electrostatic discharge (ESD) protection circuit includes an active shunt transistor, a first pull-down transistor, and a second pull-down transistor. The active shunt transistor is coupled between a first I/O pad and a reference voltage. The first pull-down transistor is connected to the reference voltage. The second pull-down transistor is connected to the first pull-down transistor and the first I/O pad. The first pull-down transistor and the second pull-down transistor are in separate isolation tanks of an isolation deep n-well.