The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Nov. 12, 2014
Corning Precision Materials Co., Ltd., Chungcheongnam-do, KR;
Hyun Hee Lee, Chungcheongnam-do, KR;
Hong Yoon, Chungcheongnam-do, KR;
Seo Hyun Kim, Chungcheongnam-do, KR;
Kyoung Wook Park, Chungcheongnam-do, KR;
Jeong Woo Park, Chungcheongnam-do, KR;
June Hyong Park, Chungcheongnam-do, KR;
Il Hee Baek, Chungcheongnam-do, KR;
Gun Sang Yoon, Chungcheongnam-do, KR;
Joo Young Lee, Chungcheongnam-do, KR;
Eun Ho Choi, Chungcheongnam-do, KR;
Abstract
The present invention relates to a light extraction substrate for an organic light emitting element, a method for manufacturing the same, and an organic light emitting element comprising the same and, more particularly, to a light extraction substrate for an organic light emitting element exhibiting a good light extraction efficiency, a method for manufacturing the same, and an organic light emitting element comprising the same. To this end, the present invention provides a light extraction substrate for an organic light emitting element, a method for manufacturing the same, and an organic light emitting element comprising the same, the light extraction substrate comprising a first light extraction layer having a plurality of pores formed therein and made of a first metal oxide doped with a dopant; and a second light extraction layer formed on the first light extraction layer and made of a second metal oxide which has a different atomic diffusion rate compared to the first metal oxide.