The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Dec. 06, 2016
Applicant:
Arm Ltd., Cambridge, GB;
Inventors:
Lucian Shifren, San Jose, CA (US);
Kimberly Gay Reid, Austin, TX (US);
Gregory Munson Yeric, Austin, TX (US);
Assignee:
ARM Ltd., Cambridge, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/12 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/14 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); H01L 45/1608 (2013.01); H01L 45/1658 (2013.01); H01L 45/1675 (2013.01); H01L 45/1683 (2013.01);
Abstract
Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) device. In embodiments, after formation of the one or more CEM traces, a spacer may be deposited in contact with the one or more CEM traces. The spacer may operate to control an atomic concentration of dopant within the one or more CEM traces by replenishing dopant that may be lost during subsequent processing and/or by forming a seal to reduce further loss of dopant from the one or more CEM traces.