The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Sep. 19, 2018
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Kimitoshi Sato, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/113 (2006.01); H01L 41/08 (2006.01); H01L 41/053 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
H01L 41/0825 (2013.01); B81B 3/0072 (2013.01); H01L 41/053 (2013.01); H01L 41/0533 (2013.01); H01L 41/081 (2013.01); H01L 41/1132 (2013.01); H01L 41/1138 (2013.01);
Abstract
A semiconductor pressure sensor includes: a first semiconductor substrate having a surface; an oxide film provided on the surface of the first semiconductor substrate and having a cavity; a second semiconductor substrate bonded to the first semiconductor substrate via the oxide film and having a diaphragm above the cavity; and a piezoelectric device provided on the diaphragm, wherein no recess is provided in the surface of the first semiconductor substrate within a region of the diaphragm, and a stress mitigating groove is provided in the oxide film outside and around the diaphragm.