The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Dec. 31, 2017
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Yuan-yu Zheng, Xiamen, CN;
Jiansen Zheng, Xiamen, CN;
Mingyue Wu, Xiamen, CN;
Chilun Chou, Xiamen, CN;
Cai-hua Qiu, Xiamen, CN;
Xiao Luo, Xiamen, CN;
Feng Lin, Xiamen, CN;
Shuiqing Li, Xiamen, CN;
Chaoyu Wu, Xiamen, CN;
Kunhuang Cai, Xiamen, CN;
XIAMEN SANAN OPTOELECTRON CO., LTD., Xiamen, CN;
Abstract
An AlGaInP light-emitting diode includes from bottom up a substrate, a distributed Bragg reflector (DBR) reflecting layer, an N-type semiconductor layer, a quantum well light-emitting layer, a P-type semiconductor layer, a transient layer and a P-type current spreading layer. The DBR reflecting layer is multispectral-doping. The P-type semiconductor layer includes a first P-type semiconductor layer adjacent to the quantum well light-emitting layer and a second P-type semiconductor layer adjacent to the transient layer. A doping concentration of the second P-type semiconductor layer is lower than that of the first P-type semiconductor layer. By improving doping concentration of the multispectral DBR reflecting layer, current spreading can be improved, thus improving aging performance. A concentration difference is formed with the transient layer to balance doping of the transient layer; this avoids increasing non-radiation composition from high doping of the transient layer during long-time aging.